Forming and compliance-free operation of low-energy, fast-switching HfOxSy/HfS2 memristors
Nanoscale Horiz., 2025, Advance ArticleDOI: 10.1039/D4NH00508B, Communication Open Access   This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.Aferdita Xhameni, AbdulAziz AlMutairi, Xuyun Guo, Irina Chircă, Tianyi Wen, Stephan Hofmann, Valeria Nicolosi, Antonio LombardoMemristors based on partially oxidised layered semiconductors show sub-nJ resistance switching between several states with no need for electroforming or compliance, making them promising candidates for future neuromorphic computing hardware.To cite this article before page numbers are assigned, use the DOI form of citation above.The content of this RSS Feed (c) The Royal Society of Chemistry
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Nanoscale Horiz., 2025, Advance Article
DOI: 10.1039/D4NH00508B, Communication
DOI: 10.1039/D4NH00508B, Communication
Open Access
This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.Aferdita Xhameni, AbdulAziz AlMutairi, Xuyun Guo, Irina Chircă, Tianyi Wen, Stephan Hofmann, Valeria Nicolosi, Antonio Lombardo
Memristors based on partially oxidised layered semiconductors show sub-nJ resistance switching between several states with no need for electroforming or compliance, making them promising candidates for future neuromorphic computing hardware.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Memristors based on partially oxidised layered semiconductors show sub-nJ resistance switching between several states with no need for electroforming or compliance, making them promising candidates for future neuromorphic computing hardware.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
